Product Datasheet
Download the attached PDF/image reference for pinout, specs, service notes, or bench reference.
Open Datasheet / PDFSD2931-10 RF Final
$240.00
Sold as Pair x2 - Q-2931-10 Power MOSFETs for Amplifier/Final Stage Repair/ Projects. Tested matched closely for dual operation.
STMicroelectronics SD2931 RF Power MOSFET
The STMicroelectronics SD2931 is a high-power N-channel RF power MOSFET designed for demanding radio frequency amplification applications. Renowned for its rugged construction, excellent RF performance, and reliable operation, the SD2931 became a popular choice in commercial communications equipment, amateur radio amplifiers, broadcast transmitters, industrial RF systems, and other high-power RF applications.
The SD2931 family earned a strong reputation among amplifier manufacturers and service technicians for its ability to deliver substantial RF output power while maintaining stable performance under continuous operating conditions. Original STMicroelectronics devices are especially valued when repairing or maintaining equipment designed around this transistor family, where preserving original component specifications is often preferred over modern substitutes.
This RF Boneyard™ device has been individually bench tested and evaluated to verify basic semiconductor functionality. Testing confirmed normal MOSFET characteristics, proper body diode operation, low gate leakage, and no evidence of shorted junctions or catastrophic device failure.
Whether used for equipment restoration, RF amplifier repair, engineering evaluation, educational purposes, or component collection, the SD2931 remains one of the most recognizable RF power MOSFET families in modern communications equipment.
Common Applications
Amateur radio RF power amplifiers
Commercial communications transmitters
Broadcast RF equipment
Industrial RF systems
Legacy RF amplifier repairs
Engineering and educational projects
Restoration of vintage communications equipment
RF Boneyard™ Note: Original STMicroelectronics SD2931 devices remain highly sought after by amplifier builders, repair technicians, restorers, and radio enthusiasts due to their established reputation within the RF industry.
Vintage Semiconductor History – STMicroelectronics SD2931 RF Power MOSFET
The SD2931 RF power MOSFET family was developed by STMicroelectronics, one of the world's leading semiconductor manufacturers. STMicroelectronics was formed in 1987 through the merger of Italy's SGS Microelettronica and France's Thomson Semiconducteurs, combining decades of European semiconductor expertise into a global technology company.
Introduced as part of STMicroelectronics' high-power RF transistor product line, the SD2931 family became widely used in commercial communications equipment, broadcast transmitters, industrial RF systems, amateur radio amplifiers, and other demanding RF power applications. The device earned a strong reputation for ruggedness, reliability, and excellent RF performance.
Over the years, several versions of the SD2931 were produced, including devices optimized for different power levels and operating requirements. The transistor family became particularly popular among amateur radio amplifier manufacturers and was frequently selected for high-performance RF amplifier designs because of its ability to deliver substantial RF output power while maintaining dependable operation.
Although many original SD2931 variants are now considered legacy or obsolete devices, they remain highly sought after by repair technicians, amplifier builders, radio restorers, and collectors maintaining older communications equipment. Original STMicroelectronics devices are especially valued when repairing equipment designed around the SD2931 platform.
Many amateur radio operators recognize the SD2931 family as one of the classic RF power MOSFET series that helped bridge the transition from earlier bipolar RF power transistor designs to modern high-performance RF MOSFET technology.
RF Boneyard™ Note: The SD2931 represents an important milestone in RF power semiconductor development and remains one of the most recognized RF power MOSFET families among amplifier builders, service technicians, and radio enthusiasts worldwide.
Compatible Radios / Boards
Trusted distributor-sourced SD2918 matched pair. Bench screened by RF Boneyard. Compatable radios Yeasue FtDX9000 Linear Amplifiers: Designed for high-power (150 W) amplification at frequencies up to 230 MHz, making it common in broadband linear power amplifiers. The SD2931-10 is a gold metalized N-channel MOS field-effect RF power transistor. Being electrically identical to the...STMicroelectronicsSD2931-10
RF Boneyard Bench Notes
RF Boneyard Bench Tests 1= Measured Results: Vgs: 2.45 V Id: 5.05 mA Ig: 0 µA Vgs(off): 1.684 V D / leakage reading: 5.1 µA gm: 30.4 mA/V Id reading: 3.0 mA at 5.1 mA test point/range Rds(on): 1.0 ? at Ip = 5.0 mA GS test voltage: 8.0 V Vf body diode: 0.60 V Bench Notes:
This SD2918 MOSFET was electrically checked using RF Boneyard bench equipment. The device showed gate response during basic screening, with Vgs measured at 2.45 V at Id = 5.05 mA. Gate leakage measured Ig = 0 µA. Vgs(off) measured 1.684 V, with leakage reading 5.1 µA. Transconductance measured gm = 30.4 mA/V, and Rds(on) measured 1.0 ? at Ip = 5.0 mA with GS test voltage noted Vgs: 2.475 V Ip: 5.03 mA Ig: 1 µA Vgs(off): 1.731 V Leakage / low-current reading: 5.1 µA gm: 32.4 mA/V Additional Id/Ip reading: 3.0 mA to 5.0 mA test range
Rds(on): < 1.0 ? at Ip = 5.0 mA GS test voltage: 8.0 V Body diode Vf: 0.50 V Short product-page version: Bench screened by RF Boneyard. mosfet # 2 Short product-page version: Bench screened by RF Boneyard. Vgs 2.45 V @ Id 5.05 mA; Ig 0 µA; Vgs(off) 1.684 V; leakage 5.1 µA; gm 30.4 mA/V; Rds(on) 1.0 ? @ Ip 5.0 mA; GS 8.0 V; body diode Vf 0.60 V. No obvious short observed during basic electrical screening. Verify compatibility before installation.
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